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Mixing characteristics of InGaAs metal-semiconductor-metal photodetectors with Schottky enhancement layers

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Mixing characteristics of InGaAs metal-semiconductor-metal photodetectors with Schottky enhancement layers

Auteurs : RBID : Pascal:03-0246656

Descripteurs français

Pascal (Inist)
- 8560G, 8105E, 8530D, 7340S, 8430Q, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Photodétecteur, Mélangeur diode barrière Schottky, Modèle dispositif semiconducteur, Barrière Schottky, Structure MSM.

English descriptors

KwdEn :
- Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Metal-semiconductor-metal structures, Photodetectors, Schottky barriers, Schottky diode mixers, Semiconductor device models.

Abstract

We report on the optoelectronic (OE) mixing characteristics of a Schottky-enhanced InGaAs-based metal-semiconductor-metal photodetector (MSM-PD). The measured frequency bandwidth of such a mixer is less than that of a corresponding photodetector. The mixing efficiency depends on the light modulation, local oscillator, and mixed signal frequencies and decreases nonlinearly with decrease in optical power. This is not observed in GaAs-based and non-Schottky-enhanced InGaAs MSM-PDs. We present a circuit model of the OE mixer to explain the experimental results. © 2003 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Stann, B" uniqKey="Stann B">B. Stann</name>
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<front><div type="abstract" xml:lang="en">We report on the optoelectronic (OE) mixing characteristics of a Schottky-enhanced InGaAs-based metal-semiconductor-metal photodetector (MSM-PD). The measured frequency bandwidth of such a mixer is less than that of a corresponding photodetector. The mixing efficiency depends on the light modulation, local oscillator, and mixed signal frequencies and decreases nonlinearly with decrease in optical power. This is not observed in GaAs-based and non-Schottky-enhanced InGaAs MSM-PDs. We present a circuit model of the OE mixer to explain the experimental results. © 2003 American Institute of Physics.</div>
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Mixing characteristics of InGaAs metal-semiconductor-metal photodetectors with Schottky enhancement layers

Mixing characteristics of InGaAs metal-semiconductor-metal photodetectors with Schottky enhancement layers

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Abstract

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